Auger recombination rate in quantum well lasers
نویسندگان
چکیده
منابع مشابه
Auger Recombination in Quantum - Well InGaAsP Heterostructure Lasers
Interband nonradiative Auger recombination in quantumwell InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of To at around room temperatures. A CONTINUI...
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Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effecti...
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Both radiative and nonradiative processes which occur in the active region of GaInAs–GaInAsP–InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of...
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The band-to-band Auger recombination rate in bulk GaSb and in a GaSb quantum well is calculated. It turns out to be larger in the quantum well because the threshold of the Auger process is located at the band edge where the density of states is larger in the quantum well than in bulk. A simple picture is developed to illustrate the physics of the Auger processes in bulk and quantum-well direct-...
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In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependen...
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ژورنال
عنوان ژورنال: Bulletin of Materials Science
سال: 1985
ISSN: 0250-4707,0973-7669
DOI: 10.1007/bf02744423